Cylindrical Titanium Sputtering Target TA1 Pure Zirconium Material

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Cylindrical Titanium Sputtering Target TA1 Pure Zirconium Material
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Features
Specifications
Name: Titanium Sputtering Target High Purity Titanium Target
Key Words: Titanium Sputtering Target
Application: Coating, Electronics Industry
Grade: Gr1 TA1 Pure
Density: 4.51g/cm3
Purity: 99.9%-99.999%
Purity 1: 2N8-4N
Material: Pure Zirconium, Pure Niobium (Nb) Target
High Light:

Cylindrical Zirconium Target

,

Pure Zirconium Sputtering Target

,

TA1 Niobium Sputtering Target

Basic Infomation
Place of Origin: China
Brand Name: N/M
Certification: ISO9001:2015 certification
Model Number: CDX-20220331C
Payment & Shipping Terms
Packaging Details: plywood case
Delivery Time: 5-35 working days
Supply Ability: 50000KG/month
Product Description

Diameter 60/65/95/100*30/32/40/45mm titanium aputtering target

 

Customized Titanium Target Titanium Round Target

 

product Pure titanium (TI) target)
purity 2N8-4N
density 4.51g/cm3
Coating dominant color Gold Blue / Rose Red / black
shape cylindrical
General size Diameter 60/65/95/100*30/32/40/45mm

 

Cylindrical Titanium Sputtering Target TA1 Pure Zirconium Material 0Cylindrical Titanium Sputtering Target TA1 Pure Zirconium Material 1


Usually we will provide a quality inspection report like this with the goods,

which shows the chemical composition and physical properties

Cylindrical Titanium Sputtering Target TA1 Pure Zirconium Material 2

Supply titanium square target, titanium round target, titanium special-shaped target

 


Cylindrical Titanium Sputtering Target TA1 Pure Zirconium Material 3

 

Cylindrical Titanium Sputtering Target TA1 Pure Zirconium Material 4

 

Purity is one of the main performance indicators of the target,

because the purity of the target has a great influence on the performance of the thin film.

 

The main performance requirements of the target:
purity
Purity is one of the main performance indicators of the target, because the purity of the target has a great influence on the performance of the thin film. However, in practical applications, the requirements for the purity of the target are not the same. For example, with the rapid development of the microelectronics industry, the size of the silicon wafer has been developed from 6", 8" to 12", and the width of the wiring has been reduced from 0.5um to 0.25um, 0.18um or even 0.13um. Previously, the target purity was 99.995%. It can meet the process requirements of 0.35um IC, while the preparation of 0.18um lines requires 99.999% or even 99.9999% for the purity of the target material.
Impurity content
Impurities in target solids and oxygen and moisture in pores are the main sources of contamination for deposited films. Targets of different uses have different requirements for different impurity contents. For example, pure aluminum and aluminum alloy targets used in the semiconductor industry have special requirements for alkali metal content and radioactive element content.
density
In order to reduce the pores in the target solid and improve the performance of the sputtered film, the target is usually required to have a higher density. The density of the target affects not only the sputtering rate, but also the electrical and optical properties of the film. The higher the target density, the better the performance of the film. In addition, increasing the density and strength of the target allows the target to better withstand thermal stress during sputtering. Density is also one of the key performance indicators of the target.
Grain size and grain size distribution
Usually the target material is of polycrystalline structure, and the grain size can be in the order of micrometers to millimeters. For the same target material, the sputtering rate of the target with fine grains is faster than that of the target with coarse grains; while the thickness distribution of the thin film deposited by sputtering of the target with smaller grain size difference (uniform distribution) is more uniform. 

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Contact Person : Grace He
Tel : 86018220766064
Fax : 86-917-3376-589
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